氧化镁MgO 氧化锆ZrO 氧化锌ZnO 二氧化碲TeO2 Wafer

WaferHome can manufacture 氧化镁MgO 氧化锆ZrO 氧化锌ZnO 二氧化碲TeO2 晶体 Wafer

Specification for 氧化镁MgO 氧化锆ZrO 氧化锌ZnO 二氧化碲TeO2 Wafer

                 
Grade(等级) Dimeter(直径)

Type/dopant(类型/掺杂)

Orientaion

crystal struction Resistivity(电阻率)

Flat

Surface/Roughness(表面粗糙度) Geometric parameter
氧化锌 ZnO 晶体 wafer

25.4mm 50.8mm 76.5mm 100mm

intrinsic

<0001> <11-20> <10-10>

Hexagonal  1 - 9 *E10 ohm-cm N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
氧化镁 MgO 晶体wafer 25.4mm 50.8mm 76.5mm 100mm intrinsic X Y Z cut Tetragonal  0.9 - 9 *E11 ohm-cm N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
氧化锆 MgO 晶体 wafer 25.4mm 50.8mm 76.5mm 100mm intrinsic X Y Z cut Tetragonal  0.9 - 9 *E11 ohm-cm N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
二氧化碲TeO2 25.4mm 50.8mm 76.5mm 100mm intrinsic X Y Z cut Tetragonal  0.9 - 9 *E11 ohm-cm N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um